MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers-Reference-Cited by-同舟云学术

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MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers

Published:1997-01 Issue:1-4 Volume:170 Page:383-389
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mawst L.J.,Bhattacharya A.,Nesnidal M.,Lopez J.,Botez D.,Syrbu A.V.,Yakovlev V.P.,Suruceanu G.I.,Mereutza A.Z.,Jansen M.,Nabiev R.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Three-core ARROW-type diode laser: novel high-power, single-mode device, and effective master oscillator for flared antiguided MOPA's

2. InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition

3. High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

4. Thermal conductivity of binary, ternary, and quaternary III‐V compounds

5. Proc. of Joint Soviet-American Workshop on the Physics of Semiconductor Lasers;Garbuzov,1991

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