Self-assembling InP quantum dots for red lasers-Reference-Cited by-同舟云学术

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Self-assembling InP quantum dots for red lasers

Published:1997-05 Issue: Volume:175-176 Page:702-706
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Eberl K.,Kurtenbach A.,Zundel M.,Jin-Phillipp J.Y.,Phillipp F.,Moritz A.,Wirth R.,Hangleiter A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Gain and the threshold of three-dimensional quantum-box lasers

2. Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates,1995

3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

4. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures

5. Mössbauer effect measurement of the recoil‐free fraction for57Fe implanted in a nanophase diamond film

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1. InP quantum dots for dislocation-tolerant, visible light emitters on Si;Applied Physics Letters;2020-11-02

2. The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys;The Canadian Journal of Chemical Engineering;2012-02-13

3. A complexant-assisted hydrothermal procedure for growing well-dispersed InP nanocrystals;Journal of Physics and Chemistry of Solids;2008-04

4. Designed formation of the stable adduct InP/CTAB/Clay;Journal of Crystal Growth;2006-03

5. InP nanocrystals via surfactant-aided hydrothermal synthesis;Journal of Applied Physics;2004-04

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