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Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxy

  • Published:1996-11 Issue:2 Volume:169 Page:243-249
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Taudt W.,Lampe S.,Sauerländer F.,Söllner J.,Hamadeh H.,Heuken M.,Jones A.C.,Rushworth S.,O'Brien P.,Malik M.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007

2. Photochemical Vapour Deposition of Thin Films;Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies;2002

3. True Blue Inorganic Optoelectronic Devices;Advanced Materials;2000-06

4. Importance of initial nucleation step on low temperature photoassisted MOVPE growth of ZnSe;Journal of Materials Science: Materials in Electronics;1999

5. Mechanism for photo-assisted MOVPE nitrogen doping of ZnSe;Journal of Crystal Growth;1998-02
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