A comparative study on protection methods against InP substrate decomposition in liquid phase epitaxy-Reference-Cited by-同舟云学术

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A comparative study on protection methods against InP substrate decomposition in liquid phase epitaxy

Published:1988-04 Issue:1 Volume:88 Page:67-70
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pfanner K.,Franke D.,Sartorius B.,Schlak M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs

2. In situ mass spectrometric investigation of metallised InP samples during annealing

3. LPE growth of GaxIn1-xAs layers on InP under PH3 partial pressure and results on Mg-doping

4. Prevention of InP surface decomposition in liquid phase epitaxial growth

5. Luminescence microscopy for quality control of material and processing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Liquid phase epitaxy;Applied Physics A Solids and Surfaces;1991-06

2. Origin and penetration depth of thermal degradation in InP;Applied Physics Letters;1989-06-19

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