InGaP lattice-mismatched LPE growth on GaAs substrates by epitaxial lateral overgrowth technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers
2. Theoretical gain of strained quantum well grown on an InGaAs ternary substrate
3. Liquid phase epitaxial growth of elastically strained InxGa1−xP and InxGa1−xAsyP1−yP solid solutions on GaAs substrates
4. Effect of trench structure on the quality of InGaAs layers grown on patterned GaAs (111) A substrates
5. Conduction band structure of GaInP
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates;physica status solidi (a);2020-09-28
2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
3. Layered Growth of Lattice-Mismatched Ga x In1−x P on GaP Substrates by Liquid Phase Epitaxy;Journal of Electronic Materials;2014-01-10
4. Epitaxial Lateral Overgrowth of Semiconductors;Springer Handbook of Crystal Growth;2010
5. Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate;Journal of Crystal Growth;2009-06
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