Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Optical Anisotropy of Vacancy-Ordered Ga2Se3Grown by Molecular Beam Epitaxy
2. Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se3
3. Über die Kristallstrukturen von Ga2S3, Ga2Se3und Ga2Te3
4. Structure de la phase ordonnée du sesquiséléniure de gallium, Ga2Se3
5. The crystal structure of β-Ga2Se3
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1. Precise Synthesis and Broadband Photoresponse of Two‐Dimensional Intrinsic Vacancy Semiconductor;Small Structures;2024-04-21
2. High-Pressure Synthesis of β- and α-In2Se3-Like Structures in Ga2S3;Chemistry of Materials;2022-06-21
3. Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure;Applied Surface Science;2022-06
4. Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs;The Journal of Physical Chemistry C;2020-07-20
5. Gallium vacancy ordering in Ga2Se3 thin layers on Si(100), Si(111), and Si(123) substrates;Crystallography Reports;2017-09
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