Effects of ions and electrons in electron-beam-excited plasma assisted CVD on nanocrystalline silicon film properties-Reference-Cited by-同舟云学术

Effects of ions and electrons in electron-beam-excited plasma assisted CVD on nanocrystalline silicon film properties

Published:2002-04 Issue: Volume:237-239 Page:1394-1398
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ohshita Y.,Yamaguchi K.,Motegi H.,Yamaguchi M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. K. Yamamoto, T. Suzuki, M. Yoshimi, A. Nakajima, Proceedings of the 14th European Photovoltaic Solar Energy Conference, WIP, Munchen, 1997, p. 1018.

2. G. Grabosch, D. Borchert, R. Hussein, W.R. Fahrner, Proceedings of the 14th European Photovoltaic Solar Energy Conference, WIP, Munchen, 1997, p. 1472.

3. E. Conrad, L. Elstner, W. Fuhs, W. Henrion, P. Muller, B. Selle, Proceedings of the 14th European Photovoltaic Solar Energy Conference, WIP, Munchen, 1997, p. 1411.

4. Growth of microcrystalline silicon film by electron beam excited plasma chemical vapor deposition without hydrogen dilution

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