Growth and properties of new III–V diluted magnetic semiconductor Ga1−xCrxAs

Author:

Zaets Wadim,Saito Hidekazu,Ando Koji

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ga1-xCrxAs: crystal structure, lattice parameter;New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors;2011

2. Ga1–xCrxAs: crystal structure, lattice parameter;New Data and Updates for III-V, II-VI and I-VII Compounds;2010

3. Structural property and half-metallicity for 3d transition metals on GaAs surface;physica status solidi (b);2005-10

4. Surface half-metallicity and interfacial mixing of (Cr, Mn, Fe)VAs/GaAs(001);Thin Solid Films;2005-09

5. Low-temperature ferromagnetic properties of the diluted magnetic semiconductorSb2−xCrxTe3;Physical Review B;2005-03-29

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