Ge concentration dependence of Sb surface segregation during SiGe MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGexHeterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
2. Reduction of SiGe heterointerface mixing by atomic hydrogen irradiation during molecular beam epitaxy and its mechanism
3. Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAs
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