Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum-Reference-Cited by-同舟云学术

Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

Published:2002-12 Issue:1-2 Volume:246 Page:15-20
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Oyama Yutaka,Tezuka Kenji,Suto Ken,Nishizawa Jun-Ichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. J. Nishizawa, Y. Kokubun, in: Extended Abstracts of the 16th Conference on Solid State Device and Materials, The Japan Society of Applied Physics, Kobe, Japan, 1984.

2. T. Suntola, J. Antson, Finnish Patent No. 52395, 1974, and US Patent No. 4058430, 1977.

3. A study of ZnTe films grown on glass substrates using an atomic layer evaporation method

4. X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH3 in ultra high vacuum

5. Lattice dilation by free electrons in heavily doped GaAs:Si

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