Elaboration and characterisation of Bi2Se3 thin films using ditertiarybutylselenide as a precursor by MOCVD system-Reference-Cited by-同舟云学术

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Elaboration and characterisation of Bi2Se3 thin films using ditertiarybutylselenide as a precursor by MOCVD system

Published:2002-09 Issue:3-4 Volume:243 Page:444-449
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Al Bayaz A.,Giani A.,Foucaran A.,Pascal-Delannoy F.,Boyer A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. D.R. Lovett, Semi-metals and Narrow-Band gap Semiconductors, Pion Limited, London, 1977, p. 181.

2. Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

3. New Semiconducting Compounds

4. Narrow-bandgap semiconductor-based thermal sensors

5. Bi2Se3 Hall Effect Magnetometer for Reliable Low Temperature Use

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering;Journal of Electronic Materials;2022-03-03

2. Bi2Se3 Topological Insulator Thin Films for Various Device Applications;Materials Horizons: From Nature to Nanomaterials;2022

3. Optical, electrical, structural and magnetic properties of BiSe thin films produced by CBD on different substrates for optoelectronics applications;Materials Research Express;2018-10-30

4. Assembly of one-dimensional nanorods into Bi2S3 films with enhanced thermoelectric transport properties;Applied Physics Letters;2007-03-12

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