Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy

Author:

Eisele H.,Lenz A.,Hennig Ch.,Timm R.,Ternes M.,Dähne M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Submonolayer Quantum Dots;Semiconductor Nanophotonics;2020

2. Nonequilibrium carrier dynamics in self-assembled quantum dots;Applied Physics Reviews;2019-09

3. Samples and Characterization;Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication;2016-10-22

4. Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy;Micron;2012-10

5. Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN(11¯00) surfaces;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-07

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