Free-standing GaN grown on epitaxial lateral overgrown GaN substrates-Reference-Cited by-同舟云学术

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Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

Published:2003-08 Issue:3-4 Volume:255 Page:277-281
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Martinez-Criado G.,Kuball M.,Benyoucef M.,Sarua A.,Frayssinet E.,Beaumont B.,Gibart P.,Miskys C.R.,Stutzmann M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. The Blue Laser Diode;Nakamura,1997

2. GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

3. High pressure growth of bulk GaN from solutions in gallium

4. Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method

5. Optical properties of GaN grown by hydride vapor-phase epitaxy

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and whispering gallery resonance of self-rolled up gallium nitride microcavities;Thin Solid Films;2017-04

2. High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE;Journal of Crystal Growth;2016-07

3. Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor;Nanotechnology;2015-02-26

4. Self-separation of two-inch-diameter freestanding GaN by hydride vapor phase epitaxy and heat treatment of sapphire;Materials Letters;2014-10

5. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2AlN/Sapphire Template;International Journal of Photoenergy;2014

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