Indium droplet formation during molecular beam epitaxy of InGaN-Reference-Cited by-同舟云学术

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Indium droplet formation during molecular beam epitaxy of InGaN

Published:1999-10 Issue:1-2 Volume:206 Page:147-149
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chaly V.P,Borisov B.A,Demidov D.M,Krasovitsky D.M,Pogorelsky Yu.V,Shkurko A.P,Sokolov I.A,Karpov S.Yu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Real time control of InxGa1−xN molecular beam epitaxy growth

2. Incorporation of indium during molecular beam epitaxy of InGaN

3. Growth and applications of Group III-nitrides

4. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

5. MBE Growth of (In)GaN for LED Applications

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of indium droplets on growth of InGaN film by molecular beam epitaxy;Superlattices and Microstructures;2018-01

2. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-03

3. Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates;Journal of Crystal Growth;2015-09

4. Effects of Nitrogen Flow Ratio on the Properties of Radiofrequency-Sputtered InGaN Films;Journal of Electronic Materials;2015-02-12

5. Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition;Journal of Materials Chemistry C;2015

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