Electrical and optical characterization of (111) oriented GaP/Si diodes grown by CBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Polar-on-nonpolar epitaxy
2. Fabrication of arrays of large step‐free regions on Si(001)
3. Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces
4. Elementary theory of heterojunctions
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1. Energy-Level Alignment, Ionization, and Stability of Bio-Amino Acids at Amino Acid/Si Junctions;Japanese Journal of Applied Physics;2008-05-16
2. Structure of the (110) antiphase boundary in gallium phosphide;Journal of Microscopy;2002-11
3. Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings;Applied Physics Letters;2002-06-17
4. Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO[sub 2]/Si(111);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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