Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Structural optimization for single junction InGaP solar cells
2. Defects in epitaxial Si‐doped GaInP
3. Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor‐phase epitaxy
4. Defects in organometallic vapor‐phase epitaxy‐grown GaInP layers
5. Effect of doping on electron traps in metalorganic molecular‐beam epitaxial GaxIn1−xP/GaAs heterostructures
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1. Modeling diffusion length damage coefficient in GaAs and InGaP solar cells under electron irradiation;Journal of Applied Physics;2022-03-14
2. Improvements in ultra‐light and flexible epitaxial lift‐off GaInP/GaAs/GaInAs solar cells for space applications;Progress in Photovoltaics: Research and Applications;2022-02-15
3. Space degradation of triple junction solar cells at low temperatures: II ‐electron irradiation;International Journal of Energy Research;2021-06-15
4. Degradation prediction of a γ-ray radiation dosimeter using InGaP solar cells in a primary containment vessel of the Fukushima Daiichi Nuclear Power Station;Journal of Nuclear Science and Technology;2019-11-15
5. Application of InGaP space solar cells for a radiation dosimetry at high dose rates environment of Fukushima Daiichi nuclear power plant;Journal of Nuclear Science and Technology;2019-03-20
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