X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method-Reference-Cited by-同舟云学术

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X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method

Published:1999-10 Issue:1-2 Volume:206 Page:8-14
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Chien-Cheng,Wu Meng-Chyi,Lee Chih-Hao,Chi Gou-Chung

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Zinc-blende–wurtzite polytypism in semiconductors

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. Cubic phase gallium nitride by chemical vapour deposition

4. Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase identification from electronic structures by Auger electron spectroscopy;Journal of Materials Research;2008-01

2. Substrates for gallium nitride epitaxy;Materials Science and Engineering: R: Reports;2002-04

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