Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman-Reference-Cited by-同舟云学术

Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

Published:2000-03 Issue:1-3 Volume:210 Page:198-202
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Martı́nez O,Avella M,de la Puente E,Jiménez J,Gérard B,Gil-Lafon E

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Gallium arsenide and other compound semiconductors on silicon

2. Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafers

3. Monolithically Integrated AlGaAs/InGaAs Laser Diode, p-n Photodetector and GaAs MESFET Grown on Si Substrate

4. Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits

5. See for example the articles by different authors in Mater. Res. Soc. Symp. Proc. 67 (91) 116.

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1. Infrared photoluminescence imaging of infrared materials: HgCdTe/Cd(Zn)Te heterostructures;Infrared Physics & Technology;2004-12

2. Properties of AlGaAs layers grown on Si by the conformal method;Materials Science and Engineering: B;2002-04

3. Study of defects in conformal GaAs/Si layers by optical techniques and photoetching;Materials Science and Engineering: B;2002-04

4. Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques;Materials Science and Engineering: B;2001-03