Structural properties of AlxGa1−xN grown on sapphire by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
3. AlGaN ultraviolet photoconductors grown on sapphire
4. Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control
5. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
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3. Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries;Applied Physics Letters;2014-09-22
4. X‐ray diffraction studies of AlxGa1−xN (0≤x≤1) ternary alloys grown on sapphire substrate;Microelectronics International;2011-05-10
5. Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact top-GaN;Japanese Journal of Applied Physics;2001-07-15
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