The polarity of AlN films grown on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. AlN epitaxial growth on atomically flat initially nitrided α-Al2O3 wafer
2. Growth of aluminum nitride on (111) silicon: Microstructure and interface structure
3. Ultraviolet and violet GaN light emitting diodes on silicon
4. O. Graydon, Opto & Laser, Europe, August 1998, p. 17.
5. Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy
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