Hydrogen radical surface cleaning of GaAs for MBE regrowth-Reference-Cited by-同舟云学术

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Hydrogen radical surface cleaning of GaAs for MBE regrowth

Published:1997-05 Issue: Volume:175-176 Page:416-421
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Burke T.M.,Linfield E.H.,Ritchie D.A.,Pepper M.,Burroughes J.H.

Funder

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Variation of the confinement potential of a quasi‐one‐dimensional electron gas by lateral p‐n junctions

2. Effect of the proximity of an ex situ patterned interface on the quality of two-dimensional electron gases at GaAs/AlGaAs heterojunctions

3. GaAs cleaning with a hydrogen radical beam gun in an ultrahigh-vacuum system

4. Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption

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2. Nanostructuring of Ultra-Thin HfO₂ Layers for High-k/III–V Device Application;Journal of Nanoscience and Nanotechnology;2011-10-01

3. The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution;Journal of Crystal Growth;2009-07

4. Formation and ordering of epitaxial quantum dots;Comptes Rendus Physique;2008-10

5. Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source;SPIE Proceedings;2008-03-03

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