Characterisation of the LPE grown InGaAsP/InP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas-Reference-Cited by-同舟云学术

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Characterisation of the LPE grown InGaAsP/InP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas

Published:1997-04 Issue:3-4 Volume:173 Page:285-296
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Volkov V.V.,Van Landuyt J.,Marushkin K.M.,Gijbels R.,Férauge C.,Vasilyev M.G.,Shelyakin A.A.,Sokolovsky A.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Unstable regions in the growth of GaInAsP by gas-source molecular beam epitaxy

2. Electron microscopy and mass-spectrometry study of InGaAsP/InP heterostructures (pin diodes) grown by liquid phase epitaxy

3. Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy

4. Unstable Regions in III-V Quaternary Solid Solutions Composition Plane Calculated with Strictly Regular Solution Approximation

5. Immiscibility in Type A1-xBxC1-yDyStrictly Regular Quaternary Solid Solutions. I. Unstable Regions

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures;Journal of Crystal Growth;2017-06

2. The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure;Journal of Physics D: Applied Physics;2007-11-16

3. LPE growth of InP/InGaAsP/InP heterostructures and separate preparation of high-temperature solutions;Inorganic Materials;2007-07

4. Spectral characteristics of InGaAsP/InP infrared emitting diodes grown by LPE;Materials Science and Engineering: B;2002-04

5. Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs(P) infrared emitting diodes;Materials Science and Engineering: B;2001-03

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