Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Electron transport in wurtzite indium nitride
2. Transient electron transport in wurtzite GaN, InN, and AlN
3. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
4. MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages
5. Epitaxial growth of InN films on MgAl2O4 (111) substrates
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1. Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy;Crystals;2019-06-05
2. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C;Japanese Journal of Applied Physics;2017-05-26
3. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
4. Material characteristics of self-assembled mushroom-like InGaN nanocolumns;Superlattices and Microstructures;2016-11
5. First-principles study of optical properties of InN nanosheet;International Journal of Modern Physics B;2016-07-20
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