High quality ZnTe heteroepitaxy layers using low-temperature buffer layers-Reference-Cited by-同舟云学术

High quality ZnTe heteroepitaxy layers using low-temperature buffer layers

Published:2003-04 Issue:1-4 Volume:251 Page:596-601
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chang Jiho,Godo Kenji,Song Junsuk,Oh Dongcheol,Lee Changwoo,Yao Takafumi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. R. Droopad, Z. Yu, C. Overgaard, J. Edwards, J. Ramdani, L. Hilt, J. Curless, J. Finder, K. Eisenbeiser, A. Demkov, B. Ooms, in: V. Shutthanandan, S. Thevuthasan, Y. Liang, E. M. Adams, R. Droopad, The 8th Workshop on Oxide Electronics, Appl. Phys. Lett. 80(10) (2002) 1803.

2. Two-dimensional growth of InSb thin films on GaAs(111)A substrates

3. Molecular-beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates

4. Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate

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