MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
3. High responsitivity intrinsic photoconductors based on AlxGa1−xN
4. High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells
5. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
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1. Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells;Vacuum;2017-06
2. Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs;Journal of Luminescence;2016-06
3. Effects of growth pressure on the structural and optical properties of multi quantum wells (MQWs) in blue LED;Ultramicroscopy;2013-04
4. Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices;Applied Physics Letters;2013-03-18
5. Growth pressure dependence of optical and structural properties of a-plane InGaN/GaN multi-quantum wells on r-plane sapphire;Journal of Crystal Growth;2011-12
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