Numerical analysis of InGaN dot-like structure and compositional fluctuation caused by phase separation:
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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1. Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode;Micromachines;2022-08-06
2. Diffuse X-ray scattering from local chemical inhomogeneities in InGaN layers;Journal of Applied Crystallography;2018-06-12
3. The role played by strain on phase separation in InGaN quantum wells;Solid State Communications;2014-09
4. Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE;Journal of Crystal Growth;2007-04
5. GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE;Journal of Crystal Growth;2007-04
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