Impurity incorporation during epitaxial growth of GaAs by chemical reaction-Reference-Cited by-同舟云学术

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Impurity incorporation during epitaxial growth of GaAs by chemical reaction

Published:2000-09 Issue:2-4 Volume:218 Page:167-172
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gandouzi M,Bourgoin J.C,Mimila-Arroyo J,Grattepain Cl,Grattepain Ch

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. J.C. Bourgoin, H. Samic-Sahinpasic. in: M.R. Brozel, G.E. Stillman (Eds.), Dans: Properties of GaAs, Inspec, Emis Data Reviews Series no. 16, 3rd edition, London, UK, 1996, p. 639.

2. Epitaxial GaAs by close space vapor transport

3. Charge Density Profiles of Close Spaced Vapor Transport GaAs Epitaxial Layers

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2. Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique;Journal of Crystal Growth;2006-03

3. Quantitative absorption spectroscopy of residual water vapor in high-purity gases: pressure broadening of the 139253-μm H_2O transition by N_2, HCl, HBr, Cl_2, and O_2;Applied Optics;2005-02-01

4. Techniques for the measurement of trace moisture in high-purity electronic specialty gases;Review of Scientific Instruments;2003-09

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