Nitridation effects of GaP(111)B substrate on MOCVD growth of InN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. E. Woelk, D. Schmitz, H. Jurgensen, M. Razeghi, Abstract of the Topical Workshop on III–V Nitrides (TWN’95), Nagoya, Japan, 1995, p. 23.
2. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
3. Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
4. Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy
5. MOVPE growth of cubic GaN on GaAs using dimethylhydrazine
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1. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy;EPJ Web of Conferences;2013
2. Indium nitride (InN): A review on growth, characterization, and properties;Journal of Applied Physics;2003-09
3. First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES;Applied Surface Science;2003-05
4. High temperature growth of InN on GaP(111)B substrate using a new two-step growth method;Journal of Crystal Growth;2002-03
5. Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy;Surface and Interface Analysis;2002
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