Properties of lattice matched ZnMgSeTe quaternary alloys grown on ZnTe substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
2. ZnMgSeTe light emitting diodes
3. H. Iwata, K. Naniwae, and K. Yashiki, Second International Symposium. on Blue Laser and Light Emitting diodes, Th-15, 1988, p.437.
4. Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs
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1. Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE;Journal of Crystal Growth;2017-06
2. Influence of source transport rate upon fractions of Mg and Se in Zn1-x Mgx Sey Te1-y layers grown by metalorganic vapor phase epitaxy;physica status solidi (c);2016-03-16
3. Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−Mg Se Te1− layers grown at various substrate temperatures or dopant transport rates by MOVPE;Journal of Crystal Growth;2015-03
4. The effect of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-ylayer grown by MOVPE;physica status solidi (c);2014-03-25
5. Density functional study ofZn1−xMgxSeyTe1−yquaternary semiconductor alloys;Physical Review B;2006-05-11
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