1. Symposium on GaAs;Peters,1973
2. Surface morphology of liquid‐phase epitaxial layers
3. D. L. Van Haren, unpublished work.
4. The GaAs sample shown in fig. 1a and 1c was grown (at 778°C) by R. G. Sobers in a source-seed slider6). The GaP sample shown in fig 1b was grown from a thin melt (1 mm) at 965°C by C. R. Paola in a slider similar to that described by Bergh et al. 5).