Regrowth and defect reduction in uncapped Se+ implanted (100) GaAs after pulsed electron beam annealing-Reference-Cited by-同舟云学术

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Regrowth and defect reduction in uncapped Se+ implanted (100) GaAs after pulsed electron beam annealing

Published:1987-04 Issue:4 Volume:82 Page:725-732
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Barbier D.,Laugier A.,Derudet B.,Pivot J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Materials Research Society Proc., Laser and Electron Beam Processing of Materials;Eisen,1980

2. Materials Research Society Proc., Vol. 1, Laser and Electron-Beam Solid Interactions and Materials Processing;Williams,1981

3. AIP Conf. Proc. No. 50, Laser-Solid Interactions and Laser Processing;Tsu,1979

4. Laser and Electron Beam Processing of Materials;Badawi,1980

5. Materials Research Society Proc., Vol. 13, Laser-Solid Interactions and Transient Thermal Processing of Materials;Rose,1983

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TEM study of ion implanted GaAs after pulsed electron beam annealing;Radiation Effects and Defects in Solids;1993-03

2. Rotational Auger depth profiling of a GaAs/AlGaAs multilayer structure;Surface and Interface Analysis;1992-06

3. Pulsed-electron-beam annealing of ion implanted GaAs;Materials Science and Engineering: B;1991-07

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