Property design of Bi4Ti3O12-based thin films using a site-engineered concept-Reference-Cited by-同舟云学术

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Property design of Bi4Ti3O12-based thin films using a site-engineered concept

Published:2003-02 Issue: Volume:248 Page:180-185
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Funakubo H.,Watanabe T.,Kojima T.,Sakai T.,Noguchi Y.,Miyayama M.,Osada M.,Kakihana M.,Saito K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Structure dependence of ferroelectric properties of bismuth layer-structured ferroelectric single crystals

2. Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

3. Lanthanum-substituted bismuth titanate for use in non-volatile memories

4. Large remanent polarization of vanadium-doped Bi4Ti3O12

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