Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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5. Optical gain in silicon nanocrystals
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1. Spectro-ellipsometric probing of wetting, nucleation, and dot/island formation during photo-excited chemical vapor deposition of Ge on SiO2 substrate;Journal of Vacuum Science & Technology B;2022-12
2. Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates;Japanese Journal of Applied Physics;2021-01-01
3. Graphene-germanium quantum dot photodetector with high sensitivity;Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2019;2019-09-09
4. Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates;Applied Surface Science;2018-04
5. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence;Chinese Physics B;2013-09
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