Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Intrinsic multiple quantum well spatial light modulators
3. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect
4. Effect of column III vacancy on arsenic precipitation in low-temperature grown III–V arsenides
5. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
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4. Interdefect correlation during thermal recovery ofEL2in semi-insulating GaAs: Proposal of a three-center-complex model;Physical Review B;2003-03-31
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