Initial stage of SiC growth on Si(1 0 0) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Semiconductors and Semimetals, vol. 7, Part B;Campbell,1971
2. The adsorbed states of ethylene on Si(100)c(4×2), Si(100)(2×1), and vicinal Si(100) 9°: Electron energy loss spectroscopy and low‐energy electron diffraction studies
3. Direct determination of absolute monolayer coverages of chemisorbed C2H2and C2H4on Si(100)
4. Adsorption and thermal behavior of ethylene on Si(100)-(2 × 1)
5. Adsorption of ethylene on the Si(100)(2 × 1) surface
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1. Growth mechanisms of 3C-SiC layer by carbonization of Si(100) substrates in high-vacuum region;Japanese Journal of Applied Physics;2014-03-27
2. Dependence on the deposition conditions in the adsorption ofC6H8molecules on aSi(100)−2×1surface;Physical Review B;2007-10-23
3. Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing;e-Journal of Surface Science and Nanotechnology;2006
4. Covalent binding of cyclohexene, 1,3-cyclohexadiene and 1,4-cyclohexadiene on Si(111)-7×7;Surface Science;2003-05
5. DECOMPOSITION OF CH4 ON SA TYPE STEPPED Si(100) SURFACE;International Journal of Modern Physics B;2002-06-30
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