The formation of 3C-SiC in crystalline Si by carbon implantation at 950°C and annealing — a structural study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Recent developments in SiC single-crystal electronics
2. Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
3. SiC buried layer formation by ion beam synthesis at 950 °C
4. High‐temperature ion beam synthesis of cubic SiC
5. Proc. Int. Conf. on Silicon Carbide and Related Materials;Lindner,1995
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