Compositional variations in InGaAsP films grown on patterned substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Chapter 4 Lateral Patterning of Quantum Well Heterostructures by Growth on Nonplanar Substrates
2. Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates
3. Spinodal decomposition in InGaAsP epitaxial layers
4. Two-dimensional phase separation inIn1−xGaxAsyP1−yepitaxial layers
5. Spinodal-like decomposition of grown by gas source molecular beam epitaxy
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1. High-speed and uncooled operation of 1.3-/spl mu/m InGaAsP strain-compensated MQW BH lasers fabricated on patterned InP substrates;Journal of Lightwave Technology;2006-07
2. Monolithic integration of an InGaAsP–InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD;Semiconductor Science and Technology;2005-04-08
3. Characterization of 3C-SiC thin films grown on Si surfaces patterned with various periods and depths;Journal of Electronic Materials;2004-05
4. Structural Perfection of Four-Layer GaxIn1 – xAsyP1 – yLaser Heterostructures;Inorganic Materials;2003-12
5. Overgrowth of submicron-patterned surfaces for buried index contrast devices;Semiconductor Science and Technology;2000-03-08
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