Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1−x)0.5P grown by metal-organic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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4. Characterization of deep levels in rapid-thermal-annealed AlGaInP;Materials Science and Engineering: B;2002-04
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