Optically pumped stimulated emission from cubic GaN/AlGaN double heterostructure grown on GaAs(100) using metalorganic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy
2. Plasma‐assisted low‐pressure metalorganic chemical vapor deposition of GaN on GaAs substrates
3. Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio
4. Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate
5. Optical gain in optically pumped cubic GaN at room temperature
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1. Cubic zincblende gallium nitride for green-wavelength light-emitting diodes;Materials Science and Technology;2017-03-17
2. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE;Superlattices and Microstructures;2016-06
3. Optical phonon modes and interband transitions in cubicAlxGa1−xNfilms;Physical Review B;2002-04-23
4. AFM measurement of initially grown GaN layer on GaAs substrate;Journal of Crystal Growth;2000-12
5. Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE;physica status solidi (a);2000-07
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