Phonon spectrum of wurtzite GaN and AlN-Reference-Cited by-同舟云学术

Phonon spectrum of wurtzite GaN and AlN

Published:1998-06 Issue: Volume:189-190 Page:656-660
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Davydov V.Yu,Kitaev Yu.E,Goncharuk I.N,Tsaregorodtsev A.M,Smirnov A.N,Lebedev A.O,Botnaryk V.M,Zhilyaev Yu.V,Smirnov M.B,Mirgorodsky A.P,Semchinova O.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. K. Karch, G. Portisch, F. Bechstedt, P. Pavone, D. Strauch, Proc. ICSCRM-95, Kyoto, Japan, 1995, p. 281.

2. Zone-boundary phonons in hexagonal and cubic GaN

3. Tables of Irreducible Representations of Space Groups and Co-representations of Magnetic Space Groups;Miller,1967

4. CRYME: A program for simulating structural, vibrational, elastic, piezoelectric and dielectric properties of materials within a phenomenological model of their potential functions

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation;physica status solidi (b);2023-12-31

2. Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method;Materials;2023-02-25

3. Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport;Materials;2022-12-09

4. Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect;Physical Review B;2022-11-29

5. Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes;PLOS ONE;2022-11-17