Growth of strained GaAs islands on (001) GaP:
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
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1. Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001);Journal of Applied Physics;2023-11-02
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3. Effect of substrate temperature on growth process of GaAs on Si(110) vicinal surface studied by reflection high-energy electron diffraction;Physica E: Low-dimensional Systems and Nanostructures;2008-02
4. Near Room Temperature InAs Quantum Wires Lasers on InP at Short Wavelength Infrared;2007 Spanish Conference on Electron Devices;2007-01
5. Self-assembled InAs quantum wire lasers on (001)InP at 1.6μm;Applied Physics Letters;2006-08-28
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