Selective growth and regrowth of high Al content AlGaAs for use in BH lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers
3. Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors
4. Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency
5. Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width;ECS Journal of Solid State Science and Technology;2015
2. Influence of Trench Width on III-V Nucleation during InP Selective Area Growth on Patterned Si(001) Substrate;ECS Transactions;2014-08-12
3. Self-aligned current aperture in native oxidized AlInAs buried heterostructure InGaAsP/InP distributed feedback laser;Applied Physics Letters;2000-03-20
4. Self-aligned AlInAs native oxidized buried hetero-structure InGaAsP/InP distributed feedback laser with circular beam and high T/sub 0/ potential;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
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