Transmission electron microscopy investigation of InNAs on GaAs grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Optical gain of InGaP and cubic GaN quantum‐well lasers with very strong spin–orbit coupling
3. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
4. MOCVD growth of InAsN for infrared applications
5. Gallium arsenide and other compound semiconductors on silicon
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1. InNxAs1-xband gap energy and band bowing coefficient calculation;The European Physical Journal Applied Physics;2007-12
2. Diffusion effect-induced InNAs films growth on GaAs (100) substrates by MOCVD;Physica B: Condensed Matter;2006-04
3. MBE growth of InAsN on (100) InAs substrates;physica status solidi (b);2005-05
4. Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared laser applications;IEE Proceedings - Optoelectronics;2003-06-01
5. Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy;Journal of Electronic Materials;2003-04
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