Study of the growth mechanism of ZnCdSe by MBE using the mass spectrometer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Observations on Bayard–Alpert Ion Gauge Sensitivities to Various Gases
2. Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements
3. Molecular-beam epitaxy growth of ZnSe using a cracked selenium source
4. Growth mechanism of II–VI compound semiconductors by molecular beam epitaxy
5. Incorporation processes in MBE growth of ZnSe
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1. Growth and characterization of Zn1-Cd Te1-O highly mismatched alloys for intermediate band solar cells;Solar Energy Materials and Solar Cells;2017-09
2. Band Gap Engineering of Zinc Selenide Thin Films Through Alloying with Cadmium Telluride;ACS Applied Materials & Interfaces;2013-05-30
3. Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
4. CVD Growth Kinetics of HfB2 Thin Films from the Single-Source Precursor Hf(BH4)4;Chemistry of Materials;2006-09-19
5. Localization of excited carriers in organometallic vapor-phase epitaxial grown ZnxCd1−xSe epilayers with partial existence of lateral compositionally modulated superlattice;Journal of Electronic Materials;2002-04
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