Effect of crystal symmetry, strain and spin–orbit coupling on electronic and optical properties of III-nitrides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
2. Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
3. Valence subband structures of wurtzite GaN/AlGaN quantum wells
4. First-principles calculations of effective-mass parameters of AlN and GaN
5. First principles calculation of effective mass parameters of GaN
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1. Effect of uniaxial compressive stress with different orientations on the hole mobility of wurtzite GaN heterojunction quantum well;AIP Advances;2022-07-01
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3. Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook;IEEE Transactions on Electron Devices;2013-10
4. Structural properties of Sb- and Te-based binary compounds: Spin-orbit effect;Materials Science-Poland;2013-01
5. Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling;Journal of Physics D: Applied Physics;2009-03-02
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