Temperature dependence of photoluminescence of GaP1−xNx alloys-Reference-Cited by-同舟云学术

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Temperature dependence of photoluminescence of GaP1−xNx alloys

Published:1998-06 Issue: Volume:189-190 Page:496-499
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yaguchi Hiroyuki,Biwa Goshi,Miyoshi Seiro,Aoki Daiichiro,Arimoto Keisuke,Onabe Kentaro,Ito Ryoichi,Shiraki Yasuhiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP

2. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content

3. N incorporation in GaP and band gap bowing of GaNxP1−x

4. Gas Source Molecular Beam Epitaxial Growth of GaN$_{{\bf 1}-{\ninmbi x}}$P x ($\mbi{x} \Leq {\bf 0.015}$) Using Ion-Removed Electron Cyclotron Resonance Radical Cell

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1. Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence;physica status solidi (b);2021-09-06

2. Photoluminescence studies on BCN thin films synthesized by RF magnetron sputtering;Materials Letters;2016-11

3. N-doping induced band-gap reduction in III-V semiconductors: First-principles calculations;physica status solidi (c);2011-01-03

4. Nitrogen-induced optical absorption spectra of InP and GaP: direct vs. indirect band-gap systems;AIP Conference Proceedings;2011

5. Origin of near-band-edge photoluminescence of GaAsN;2010 35th IEEE Photovoltaic Specialists Conference;2010-06

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