A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy-Reference-Cited by-同舟云学术

A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy

Published:1999-02 Issue:1-2 Volume:197 Page:113-128
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Walther T,Humphreys C.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference63 articles.

1. Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration

2. Si1−xGex/Si multiple quantum well infrared detector

3. High-performance X-ray detection in a new analytical electron microscope

4. High‐energy resolution electron spectrometer for 1‐nm spatial analysis

5. Atomic-resolution chemical analysis using a scanning transmission electron microscope

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