Band gap energy of GaNAs grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Electronic Structures of Semiconductor Alloys
3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
4. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
5. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy;Journal of Electronic Materials;2014-01-28
2. MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications;Journal of Electronic Materials;2000-01
3. Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures;Applied Physics Letters;1999-12-13
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