Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Zn Diffusion into InP Using Dimethylzinc as a Zn Source
2. Zinc diffusion in InP using diethylzinc and phosphine
3. Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures
4. N. Carr, J. Thompson, Proc. EW MOVPE VII, 1997, Paper A1.
5. Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs
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