Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Uniform and high coupling efficiency between InGaAsP-InP buried heterostructure optical amplifier and monolithically butt-coupled waveguide using reactive ion etching
2. Selective area chemical beam epitaxy for butt-coupling integration
3. Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE
4. Interface manipulation in multiple-layer structures grown by chemical beam epitaxy
5. Y.S. Oei, L.H. Spiekman, F.H. Groen, I. Moerman, E.G. Metaal, J.W. Pedersen, Proc. 7th Eur. Conf. On Integr. Opt. ECIO, 1995, Delft, The Netherlands, p. 205.
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